高良率十频带砷化镓单片反馈放大器(0,3 - 3GHz)的设计与技术

1986 16th European Microwave Conference Pub Date : 1986-10-01 DOI:10.1109/EUMA.1986.334261

M. Renvoise, N. Sebati, C. Kermarrec

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引用次数: 0

摘要

一个单片GaAs两级反馈放大器，十频宽，0,3 - 3ghz，已经被开发出来，以证明MMIC生产技术的有效性。小信号增益15db，噪声系数小于5db，输入输出驻波比优于1,6。获得了高的加工和电路良率。

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Design and Technology for High Yield Decade Bandwidth GaAs Monolithic Feedback Amplifier (0,3 - 3GHz)

A monolithic GaAs two stage feedback amplifier, with one decade bandwidth, 0,3 - 3 GHz, has been developped to demonstrate the validity of the MMIC's production technology. It yields 15db small signal gain, less than 5db noise figure with input and output VSWR better than 1,6. High processing and circuit yields are obtained.

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1986 16th European Microwave Conference

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