开关条件下MOSFET闪烁噪声的实验研究及射频应用建模

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169) Pub Date : 2001-05-06 DOI:10.1109/CICC.2001.929808

Zhaofeng Zhang, J. Lau

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引用次数: 17

摘要

研究了开关条件下的闪烁噪声机理。实验结果表明，基带闪变噪声是输出电流各谐波处上转换栅极闪变噪声的叠加。讨论了降低闪烁噪声的方法。基于实测结果，提出了开关条件下射频应用的大信号闪烁噪声模型，并通过仿真和实测进行了验证。利用所建立的模型，对直接转换用单平衡吉尔伯特混频器的噪声性能进行了分析和讨论。

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Experimental study on MOSFET's flicker noise under switching conditions and modelling in RF applications

The flicker noise mechanism under switching conditions is studied. Experimental results show that the baseband flicker noise is a superposition of upconverted gate flicker noise at each harmonic of the output current. Methods to reduce the flicker noise are discussed. Based on the measured results, the large signal flicker noise model for RF applications under switching conditions is proposed and validated by simulations and measurements. With the proposed model, the noise performance of a single-balanced Gilbert mixer for direct conversion applications is analysed and discussed.

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Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169)

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