{"title":"面向词记忆的词内错误检测","authors":"S. Hamdioui, A. V. Goor, M. Rodgers","doi":"10.1109/VTEST.2003.1197657","DOIUrl":null,"url":null,"abstract":"This paper improves upon the state of the art in testing word oriented memories. It first presents a complete set of fault models for intra-word coupling faults. Then, it establishes the data background sequence (DBS) for each intra-word coupling fault. These DBSs will be compiled into a (1 + 28 * [log/sub 2/B]) * n/B test with complete fault coverage of the target faults, where n is the size of the memory and B the word size. The test length can be reduced to 29 * n/B when the intra-word faults are restricted to physical adjacent cells within a word.","PeriodicalId":292996,"journal":{"name":"Proceedings. 21st VLSI Test Symposium, 2003.","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Detecting intra-word faults in word-oriented memories\",\"authors\":\"S. Hamdioui, A. V. Goor, M. Rodgers\",\"doi\":\"10.1109/VTEST.2003.1197657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper improves upon the state of the art in testing word oriented memories. It first presents a complete set of fault models for intra-word coupling faults. Then, it establishes the data background sequence (DBS) for each intra-word coupling fault. These DBSs will be compiled into a (1 + 28 * [log/sub 2/B]) * n/B test with complete fault coverage of the target faults, where n is the size of the memory and B the word size. The test length can be reduced to 29 * n/B when the intra-word faults are restricted to physical adjacent cells within a word.\",\"PeriodicalId\":292996,\"journal\":{\"name\":\"Proceedings. 21st VLSI Test Symposium, 2003.\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. 21st VLSI Test Symposium, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTEST.2003.1197657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. 21st VLSI Test Symposium, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTEST.2003.1197657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Detecting intra-word faults in word-oriented memories
This paper improves upon the state of the art in testing word oriented memories. It first presents a complete set of fault models for intra-word coupling faults. Then, it establishes the data background sequence (DBS) for each intra-word coupling fault. These DBSs will be compiled into a (1 + 28 * [log/sub 2/B]) * n/B test with complete fault coverage of the target faults, where n is the size of the memory and B the word size. The test length can be reduced to 29 * n/B when the intra-word faults are restricted to physical adjacent cells within a word.