软开关绝缘栅器件功率损耗的比较研究

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583658

A. Consoli, C. Licitra, S. Musumeci, A. Testa, F. Frisina, R. Letor

{"title":"软开关绝缘栅器件功率损耗的比较研究","authors":"A. Consoli, C. Licitra, S. Musumeci, A. Testa, F. Frisina, R. Letor","doi":"10.1109/ISPSD.1994.583658","DOIUrl":null,"url":null,"abstract":"The purpose of the present paper is to investigate the switching and conduction losses mechanisms in Insulated Gate Devices (IGDs) such as MOSFETs, IGBTs and MCTs in order to give a support to designers of resonant circuits in selecting the more appropriate IGDs to be used on the basis of design requirements.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Comparative investigation on power losses in soft-switching insulated gate devices\",\"authors\":\"A. Consoli, C. Licitra, S. Musumeci, A. Testa, F. Frisina, R. Letor\",\"doi\":\"10.1109/ISPSD.1994.583658\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of the present paper is to investigate the switching and conduction losses mechanisms in Insulated Gate Devices (IGDs) such as MOSFETs, IGBTs and MCTs in order to give a support to designers of resonant circuits in selecting the more appropriate IGDs to be used on the basis of design requirements.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583658\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

本文的目的是研究绝缘栅器件(igd)如mosfet、igbt和mct中的开关和传导损耗机制，以便为谐振电路的设计者根据设计要求选择更合适的igd提供支持。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Comparative investigation on power losses in soft-switching insulated gate devices

The purpose of the present paper is to investigate the switching and conduction losses mechanisms in Insulated Gate Devices (IGDs) such as MOSFETs, IGBTs and MCTs in order to give a support to designers of resonant circuits in selecting the more appropriate IGDs to be used on the basis of design requirements.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

自引率

0.00%

发文量