/spl β /-PVDF/PbTiO/sub - 3/薄膜的制备及其电学性能

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195898

C. Wang, M. Kao, Y. Chen

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引用次数: 3

摘要

采用溶胶-凝胶法在Pt/SiO/ sub2 /Si衬底上制备了铁电聚合物/陶瓷结构薄膜。双层薄膜由极性/spl β /-相聚偏氟乙烯(PVDF)和厚度为1 /spl μ /m的多晶钛酸铅(PbTiO/ sub3 /)薄膜组成。通过改变PVDF溶液的浓度(0.6/spl sim/1.0 M)，得到了不同厚度的PVDF薄膜(50-580 nm)，并研究了不同工艺参数对PVDF/PbTiO/sub 3/薄膜特性的影响。在65/spl℃下结晶2 h的PVDF薄膜，在511和840 cm/sup -1/的红外光谱处，可以观察到/spl β /相的特征。随着PVDF/PbTiO/sub 3/薄膜PVDF厚度的增加，相对介电常数(/spl epsi//sub r/)从63降低到20，泄漏电流密度(J)也从1.54 /spl次/ 10/sup -6/降低到3.86 /spl次/ 10/sup -7/ A/cm/sup 2/。

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Preparation and electrical property of /spl beta/-PVDF/PbTiO/sub 3/ thin films

Ferroelectric polymer/ceramic structure thin films were fabricated on Pt/SiO/sub 2//Si substrates using a sol-gel method. The bilayer thin film was composed of polar /spl beta/-phase poly(vinylidene fluoride) (PVDF) and 1 /spl mu/m thickness of polycrystalline lead titanate (PbTiO/sub 3/) thin film. By changing the concentrations of PVDF solutions (0.6/spl sim/1.0 M), various thickness of PVDF thin films (50-580 nm) were obtained, and the effects of various processing parameters on the characteristics of PVDF/PbTiO/sub 3/ thin films were studied. The characteristic of the /spl beta/ phase at infrared spectrum of 511 and 840 cm/sup -1/ can be observed in PVDF film crystallized at 65/spl deg/C for 2 h. With the increase of the PVDF thickness of the PVDF/PbTiO/sub 3/ films, the relative dielectric constant (/spl epsi//sub r/) decreased from 63 to 20 and the leakage current density (J) also decreased from 1.54 /spl times/ 10/sup -6/ to 3.86 /spl times/ 10/sup -7/ A/cm/sup 2/.

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来源期刊

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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