机械剥离层状过渡金属二硫化物mosfet的串联电阻和迁移率

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839668

A. Sachid, Hui Fang, A. Javey, C. Hu

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引用次数: 1

摘要

我们表明，传输线方法，其中一组器件的使用，并不总是正确地估计串联电阻的机械剥离过渡金属二硫化物mosfet。我们从单个器件的电流-电压特性计算串联电阻和载流子迁移率。我们表明，即使对于长通道器件，也应考虑串联电阻以进行精确的迁移率计算。

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Series resistance and mobility in mechanically-exfoliated layered transition metal dichalcogenide MOSFETs

We show that transmission line method, where a set of devices are used, does not always correctly estimate series resistance of mechanically-exfoliated transition metal dichalcogenide MOSFETs. We calculate series resistance and carrier mobility from current-voltage characteristics of a single device. We show that series resistance should be considered for accurate mobility calculation even for long channel devices.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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