高纵横比通过硅孔(tsv)使用线键合

2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) Pub Date : 2013-06-16 DOI:10.1109/TRANSDUCERS.2013.6626728

S. Schroder, A. Fischer, G. Stemme, F. Niklaus

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引用次数: 10

摘要

本文报道了一种高纵横比硅通孔(tsv)的制造方法。采用标准的线键合技术实现了通孔的金属填充。制备了直径为30 μm，长径比在10:1 ~ 20:1之间的tsv。进行了基本的电学表征和光学检测，以验证TSV的金属和绝缘子填充的电阻和完整性。

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Very high aspect ratio through silicon vias (TSVs) using wire bonding

This paper reports a fabrication approach for very high aspect ratio through silicon vias (TSVs). The metal filling of the through via holes is implemented by adapting standard wire bonding technology. TSVs with a diameter of 30 μm and aspect ratios between 10:1 and 20:1 have been fabricated. Basic electrical characterization and optical inspection have been conducted to verify the resistance and integrity of the metal and insulator filling of the TSV.

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来源期刊

2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)

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