一种采用电压比调节技术的3.2ppm/°C二阶温度补偿CMOS片上振荡器

Guoqiang Zhang, Kosuke Yayama, Akio Katsushima, T. Miki
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引用次数: 8

摘要

介绍了一种用于本地互连网络(LIN)总线的CMOS片上振荡器(OCO)。输出频率的温度依赖性通过电压比调节(VRA)技术进行补偿。频率随电源电压的变化通过一个宽输入范围为1.8 V至5.0 V的稳压器来减小。由封装应力引起的频移通过电阻的放置最小化。在- 40°C至150°C的温度范围内,在不受封装应力影响的情况下,输出频率的测量温度系数分别为3.2ppm/°C和14.2ppm/°C。测量频率随电源电压的变化在±0.015%以内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 3.2ppm/°C second-order temperature compensated CMOS on-chip oscillator using voltage ratio adjusting technique
A CMOS on-chip oscillator (OCO) for local interconnection network (LIN) bus is presented. The temperature dependence of the output frequency is compensated by the voltage ratio adjusting (VRA) technique. The frequency variation with supply voltage is reduced by a voltage regulator with a wide input range of 1.8 V to 5.0 V. The frequency shift caused by package stress is minimized by resistor placement. Over a temperature range of −40°C to 150°C, the measured temperature coefficients of the output frequency are 3.2ppm/°C without the effect of the package stress and 14.2ppm/°C with that, respectively. The measured frequency variation with supply voltage is within ±0.015%.
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