基于蒙特卡罗方法的亚50nm区域GeOI NFET标度

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563554

S. Barraud, L. Clavelier

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引用次数: 0

摘要

采用MC模拟方法研究了锗的电学性质和GeOI器件的性能。我们已经表明，当通道长度缩小时，离子改善会增加，而在应变si基NFET中则不是这样。结果清楚地表明，锗可能是未来CMOS技术的一种有前途的材料。

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Scaling of GeOI NFET in sub-50nm regime using a Monte-Carlo method

Electrical properties in germanium and performances of GeOI devices have been studied using MC simulations. We have shown an ion improvement increasing when the channel length is shrinked that is not the case in strained-Si based NFET. The results clearly demonstrate that the germanium may be a promising material for the future CMOS technology.

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2005 IEEE International SOI Conference Proceedings

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