特别会议1:辐射硬化技术

N. Seifert
{"title":"特别会议1:辐射硬化技术","authors":"N. Seifert","doi":"10.1109/IOLTS.2008.66","DOIUrl":null,"url":null,"abstract":"Summary form only given, as follows. While the industry does not agree on the details of soft error rate per device trends, an increase of chip-level upset rates without implementation of additional soft error mitigation features is undisputed. This session focuses on some of the latest hardening techniques introduced in the literature. Prof. Mitra of Stanford University will provide an overview of potential solutions, while Dr. N. Seifert (Intel) and Dr. P. Roche (STMicroelectronics) will be discussing measured SER data of selected hardening techniques.","PeriodicalId":261786,"journal":{"name":"2008 14th IEEE International On-Line Testing Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Special Session 1: Radiation Hardening Techniques\",\"authors\":\"N. Seifert\",\"doi\":\"10.1109/IOLTS.2008.66\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given, as follows. While the industry does not agree on the details of soft error rate per device trends, an increase of chip-level upset rates without implementation of additional soft error mitigation features is undisputed. This session focuses on some of the latest hardening techniques introduced in the literature. Prof. Mitra of Stanford University will provide an overview of potential solutions, while Dr. N. Seifert (Intel) and Dr. P. Roche (STMicroelectronics) will be discussing measured SER data of selected hardening techniques.\",\"PeriodicalId\":261786,\"journal\":{\"name\":\"2008 14th IEEE International On-Line Testing Symposium\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 14th IEEE International On-Line Testing Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IOLTS.2008.66\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 14th IEEE International On-Line Testing Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2008.66","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

仅给出摘要形式,如下。虽然业界对每个设备的软错误率趋势的细节尚未达成一致,但如果没有实施额外的软错误缓解功能,芯片级错误率将会增加,这是无可争议的。本次会议重点介绍了文献中介绍的一些最新的硬化技术。斯坦福大学的Mitra教授将概述潜在的解决方案,而N. Seifert博士(英特尔)和P. Roche博士(意法半导体)将讨论选定硬化技术的SER测量数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Special Session 1: Radiation Hardening Techniques
Summary form only given, as follows. While the industry does not agree on the details of soft error rate per device trends, an increase of chip-level upset rates without implementation of additional soft error mitigation features is undisputed. This session focuses on some of the latest hardening techniques introduced in the literature. Prof. Mitra of Stanford University will provide an overview of potential solutions, while Dr. N. Seifert (Intel) and Dr. P. Roche (STMicroelectronics) will be discussing measured SER data of selected hardening techniques.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信