1gb多级ag - and型闪存，具有10mb /s的编程吞吐量，适用于大容量存储应用

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. Pub Date : 2003-02-09 DOI:10.1109/ISSCC.2003.1234305

K. Yoshida, O. Tsuchiya, Y. Yamaguchi, J. Kishimoto, Y. Ikeda, S. Narumi, Y. Takase, K. Furusawa, K. Izawa, T. Yoshitake, T. Kobayashi, H. Kurata, M. Kanemitsu

{"title":"1gb多级ag - and型闪存，具有10mb /s的编程吞吐量，适用于大容量存储应用","authors":"K. Yoshida, O. Tsuchiya, Y. Yamaguchi, J. Kishimoto, Y. Ikeda, S. Narumi, Y. Takase, K. Furusawa, K. Izawa, T. Yoshitake, T. Kobayashi, H. Kurata, M. Kanemitsu","doi":"10.1109/ISSCC.2003.1234305","DOIUrl":null,"url":null,"abstract":"A 1 Gb multilevel flash memory is fabricated in a 0.13 /spl mu/m CMOS process. The chip area of 95 mm/sup 2/ is achieved using AG-AND-type cells with a multilevel program cell technique and compact write-buffer. By use of constant-charge-injection programming and multi-bank operation, high-speed programming throughput of 10 MB/s achieved.","PeriodicalId":171288,"journal":{"name":"2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 1 Gb multilevel AG-AND-type flash memory with 10 MB/s programming throughput for mass storage application\",\"authors\":\"K. Yoshida, O. Tsuchiya, Y. Yamaguchi, J. Kishimoto, Y. Ikeda, S. Narumi, Y. Takase, K. Furusawa, K. Izawa, T. Yoshitake, T. Kobayashi, H. Kurata, M. Kanemitsu\",\"doi\":\"10.1109/ISSCC.2003.1234305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1 Gb multilevel flash memory is fabricated in a 0.13 /spl mu/m CMOS process. The chip area of 95 mm/sup 2/ is achieved using AG-AND-type cells with a multilevel program cell technique and compact write-buffer. By use of constant-charge-injection programming and multi-bank operation, high-speed programming throughput of 10 MB/s achieved.\",\"PeriodicalId\":171288,\"journal\":{\"name\":\"2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-02-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2003.1234305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2003.1234305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

以0.13 /spl mu/m的CMOS工艺制备了1gb多电平快闪存储器。芯片面积为95 mm/sup 2/，采用ag - and型单元，采用多级程序单元技术和紧凑的写缓冲区。采用恒充注编程和多银行操作，实现了10mb /s的高速编程吞吐量。

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A 1 Gb multilevel AG-AND-type flash memory with 10 MB/s programming throughput for mass storage application

A 1 Gb multilevel flash memory is fabricated in a 0.13 /spl mu/m CMOS process. The chip area of 95 mm/sup 2/ is achieved using AG-AND-type cells with a multilevel program cell technique and compact write-buffer. By use of constant-charge-injection programming and multi-bank operation, high-speed programming throughput of 10 MB/s achieved.

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来源期刊

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.

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