J. M. Nam, Jang Won Ho, Chung Myung Rea, Lee Yun Hyun
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Design and fabrication of GaAs MMIC high power amplifier for KT IMT-2000 handset
A GaAs power amplifier MMIC for an IMT-2000 handset is designed, fabricated and analyzed. The power amplifier, which is of A-class, has 4 times the bandwidth in the RF range (1955 /spl plusmn/70 MHz), a 570 mW output power, a 41% power added efficiency, -15/spl sim/-20 dB reflection coefficient, a 0.5 dB gain flatness in the operating frequency, and an input & output VSWR below 1.3 is realized.