{"title":"虚拟电源域的LU应力导致软故障","authors":"K. Domanski, H. Gossner","doi":"10.1109/EOSESD.2015.7314795","DOIUrl":null,"url":null,"abstract":"A shut-down of IC was caused by current injection into a USB 2.0 pin. Root cause was a substrate current forced into a power rail supplied by a weak LDO. Connecting the guard rings to a robust VDD supply resolved the problem. As the failure could not be revealed by JESD78 testing, a modified latchup test setup is proposed.","PeriodicalId":341383,"journal":{"name":"2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Soft fails due to LU stress of virtual power domains\",\"authors\":\"K. Domanski, H. Gossner\",\"doi\":\"10.1109/EOSESD.2015.7314795\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A shut-down of IC was caused by current injection into a USB 2.0 pin. Root cause was a substrate current forced into a power rail supplied by a weak LDO. Connecting the guard rings to a robust VDD supply resolved the problem. As the failure could not be revealed by JESD78 testing, a modified latchup test setup is proposed.\",\"PeriodicalId\":341383,\"journal\":{\"name\":\"2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2015.7314795\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2015.7314795","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Soft fails due to LU stress of virtual power domains
A shut-down of IC was caused by current injection into a USB 2.0 pin. Root cause was a substrate current forced into a power rail supplied by a weak LDO. Connecting the guard rings to a robust VDD supply resolved the problem. As the failure could not be revealed by JESD78 testing, a modified latchup test setup is proposed.