基于潜在传播模型的MOS lsi失效分析支持工具

M. Kodama, H. Kakinuma, J. Kumagai, H. Niina, J. Kiji
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引用次数: 0

摘要

本文提出了一种利用MOS LSI失效分析系统FAST进行失效分析的有效方法。当LSI设计数据、测试模式和测试条件输入FAST时,它根据我们提出的电位传播模型计算集成电路中的电位,并将结果作为时序图输出。然后可以使用时序图FAST识别电气故障的位置,甚至允许工程师在没有详细设计知识的情况下快速准确地分析设备中的故障。这种方法对逻辑lsi和内存lsi的外围电路非常有用,因为这些电路的故障通常难以定位。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Potential propagation model-based failure analysis support tool for MOS LSIs
This paper presents an efficient failure analysis method using a MOS LSI failure analysis system, named Failure Analysis Support Tool (FAST). When LSI design data, test patterns and test conditions are input into FAST, it calculates the potential in integrated circuits based on our proposing Potential Propagation model, and outputs the result as a timing diagram. The location of electrical faults can then be identified using the timing diagram FAST even allows engineers without detailed knowledge of the design to analyze failures in the device swiftly and accurately. This method is useful for logic LSIs and the peripheral circuits of memory LSIs, where faults are often difficult to locate.
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