将RET-IGBT(嵌入式发射极沟槽IGBT)概念扩展到高压:3.3kV RET-IGBT的实验演示

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393622

L. Ngwendson, I. Deviny, C. Zhu, I. Saddiqui, C. Kong, A. Islam, J. Hutchings, J. Thompson, M. Briggs, O. Basset, H. Luo, Y. Wang, Y. Yao

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引用次数: 4

摘要

本文给出了新型3.3kV RET-IGBT(嵌入式发射极沟槽IGBT)的仿真和实验结果。仿真结果表明，虽然RET概念减少了有源区域的沟槽到沟槽台，但它没有出现传统“窄台”器件中报道的反转层调制现象，这种现象会在非常精细的尺寸下降低性能。研究还表明，与标准沟槽IGBT相比，高压RET-IGBT在不降低RBSOA和SCSOA等器件并联时的动态性能的情况下，可以表现出更好的VCE(sat)性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extending the RET-IGBT (recessed emitter trench IGBT) concept to high voltages: Experimental demonstration of 3.3kV RET IGBT

In this paper we show simulation and experimental results of new 3.3kV RET-IGBT (Recessed Emitter Trench IGBT). Simulation results show that although the RET concept reduces the active region's trench to trench mesa, it does not show the reported inversion layer modulation phenomenon in conventional "narrow mesa" devices, which can degrade performance with very fine dimensions. It is also shown that High Voltage RET-IGBT can show superior VCE(sat) performance compared to standard Trench IGBT without degrading the dynamic performance such as RBSOA and SCSOA when devices are paralleled.

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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