退火温度对Ba0.95Sr0.05TiO3薄膜微观结构和光学性能的影响

Y. Iriani, F. Nurosyid, Ratna Mayasari, D. Sandi
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引用次数: 0

摘要

退火温度对Ba0.95Sr0.05TiO3薄膜微观结构和光学性能的影响。铁电材料,其中之一是钛酸钡锶(BST),可以应用于光伏。铁电薄膜在pn结中起p型半导体的作用。采用自旋镀膜机制备的CSD方法在Pt/Si(111)和石英衬底上沉积了BST (Ba0.95Sr0.05TiO3)薄膜。在800°C、900°C和1000°C的不同温度下进行退火,观察退火温度对BST薄膜微观结构和光学性能的影响。XRD结果表明,随着退火温度的升高,衍射峰的强度逐渐增大。从而使Ba0.95Sr0.05TiO3薄膜的结晶程度和晶粒尺寸增大。形貌结果表明,随着退火温度的升高,Ba0.95Sr0.05TiO3薄膜的晶粒尺寸逐渐增大。Ba0.95Sr0.05TiO3薄膜的光学性质包括吸光度和带隙能值。带隙能随烧结温度的升高而减小。Ba0.95Sr0.05TiO3薄膜的带隙能量在1000℃时达到最小,为3.20 eV。BST薄膜在1000°C的温度下退火,可以被认为是光伏铁电材料的候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ANNEALING TEMPERATURES’ EFFECTS ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF Ba0.95Sr0.05TiO3 FILMS
ANNEALING TEMPERATURES’ EFFECTS ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF Ba0.95Sr0.05TiO3 FILMS. Ferroelectric materials, one of which is Barium Strontium Titanate (BST), can be applied for photovoltaic. Ferroelectric films function as the P-type semiconductor in the P-N junction. BST (Ba0.95Sr0.05TiO3) films have been deposited on Pt/Si (111) and quartz substrates via the CSD method prepared by spin coater. The films were annealed at various temperatures of 800 °C, 900 °C, and 1000 °C to observe the annealing temperatures' effects on the microstructure and optical properties of the BST films. From the XRD results, the intensity of diffraction peaks gets higher along with the higher annealing temperature. It thus causes the level of crystallization and the crystal size of the Ba0.95Sr0.05TiO3 films to increase. The morphology results reveal that the grains size of the Ba0.95Sr0.05TiO3 films is getting larger with the higher annealing temperature. The optical properties examined in the Ba0.95Sr0.05TiO3 films include absorbance and bandgap energy values. Values of bandgap energy show a decrease with increasing sintering temperature. The smallest bandgap energy of the Ba0.95Sr0.05TiO3 film is achieved at 1000 °C of 3.20 eV. BST films were annealed at temperature 1000 °C attained from this study can be considered as candidate for a photovoltaic ferroelectric material.
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