用于功率放大器应用的0.35 μm SiGe BiCMOS技术

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI:10.1109/BIPOL.2007.4351868

A. Joseph, Qizhi Z. Liu, W. Hodge, P. Gray, K. Stein, R. Previti-Kelly, P. Lindgren, E. Gebreselasie, B. Voegeli, P. Candra, D. Hershberger, R. Malladi, Ping-Chuan Wang, K. Watson, Z. He, J. Dunn

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引用次数: 22

摘要

在本文中，我们介绍了一种最先进的SiGe BiCMOS功率放大器技术，该技术具有两个分别为40 GHz / 6.0 V和27 GHz / 8.5 V (fT - BVceo)的NPNs，一种新型低电感金属接地硅通孔(TSV)，集成在低成本0.35 μm光刻节点上，采用3.3 V / 5.0 V双栅CMOS技术和50 Ω上的高质量无源。cm衬底。

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A 0.35 μm SiGe BiCMOS technology for power amplifier applications

In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dual-gate CMOS technology and high-quality passives on a 50 Ω.cm substrate.

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2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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