c波段2kW GaN功率放大模块的设计与实现

2016 IEEE MTT-S International Wireless Symposium (IWS) Pub Date : 2016-03-14 DOI:10.1109/IEEE-IWS.2016.7585461

Zhang Haibing, Xu Xiaofan, Kuang Xiaole, Zhu Weitao

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引用次数: 3

摘要

本文介绍了一种2kW功率放大器模块。设计工作在C波段，脉宽500ps，占空比30%。该模块已实现物理实现，并实现了30%的高PAE, 63dBm输出功率和63dB相关增益。该模块的主要器件为国产AB级GaN HEMT功率晶体管。每个晶体管的输出功率都在200瓦以上。本文介绍了GaN功率放大模块的主要特性和关键技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design and realization of a C-band 2kW GaN power amplifier module

A 2kW power amplifier module is described in this paper. It is designed to operate at C band, pulse width of 500 Ps, and duty cycle of 30%. The module has been physically implemented and achieved a high PAE of 30%, 63dBm output power and associated gain of 63dB. The main devices of this module are GaN HEMT power transistors working at class AB made in China. The output power of each transistor is more than 200 watts. In this paper, the main properties and key technologies of the GaN power amplifier module are presented.

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2016 IEEE MTT-S International Wireless Symposium (IWS)

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