基于ztc的0.5V CMOS基准电压

Y. Wenger, B. Meinerzhagen
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引用次数: 1

摘要

本文提出了一种基于MOS晶体管零温度系数工作点的0.5 V电源基准电压电路。回顾了ZTC条件,发现偏置在其ZTC点以下的MOSFET与PTAT电流源可以在这个低电源电压下产生温度稳定的输出。考虑到这个想法,在130纳米CMOS中设计了一个不依赖于肖特基二极管等特殊器件的电路。仿真结果表明,该电路在0.5 V电源下产生318 mV的平均参考电压。温度系数为154 ppm/K,基准电压在直流时的电源抑制比(PSRR)为41 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A ZTC-based 0.5V CMOS Voltage Reference
This paper presents a voltage reference circuit operational from a 0.5 V supply which is based on the zero-temperature coefficient (ZTC) operating point of a MOS transistor. The ZTC condition is reviewed and it is found that a MOSFET biased below its ZTC point with a PTAT current source can yield a temperature stable output at this low supply voltage. With this idea in mind, a circuit which does not rely on the availability of special devices like Shottky diodes is designed in 130 nm CMOS. Simulations show that this circuit generates an average reference voltage of 318 mV from a 0.5 V supply. The temperature coefficient is 154 ppm/K and the voltage reference has a power supply rejection ratio (PSRR) of 41 dB at DC.
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