{"title":"采用隧道式喷射器进行高效自旋注入","authors":"Xin Jiang","doi":"10.1109/ICMENS.2005.46","DOIUrl":null,"url":null,"abstract":"Summary form only given, as follows. Semiconductor spintronics aims to develop novel sensor, memory and logic devices by manipulating the spin states of carriers in semiconducting materials. This talk will focus on electrical spin injection into semiconductors, which is a prerequisite for spintronics and, in particular, on tunnel based spin injectors that are potentially operable above room temperature. The spin polarization of the electron current within the semiconductor is detected by measuring the circular polarization of the electroluminescence from a quantum well light emitting diode structure. The temperature and bias dependence of the electroluminescence polarization provides insight into the spin relaxation mechanisms within the semiconductor heterostructure.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Efficient spin injection using tunnel injectors\",\"authors\":\"Xin Jiang\",\"doi\":\"10.1109/ICMENS.2005.46\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given, as follows. Semiconductor spintronics aims to develop novel sensor, memory and logic devices by manipulating the spin states of carriers in semiconducting materials. This talk will focus on electrical spin injection into semiconductors, which is a prerequisite for spintronics and, in particular, on tunnel based spin injectors that are potentially operable above room temperature. The spin polarization of the electron current within the semiconductor is detected by measuring the circular polarization of the electroluminescence from a quantum well light emitting diode structure. The temperature and bias dependence of the electroluminescence polarization provides insight into the spin relaxation mechanisms within the semiconductor heterostructure.\",\"PeriodicalId\":185824,\"journal\":{\"name\":\"2005 International Conference on MEMS,NANO and Smart Systems\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 International Conference on MEMS,NANO and Smart Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMENS.2005.46\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 International Conference on MEMS,NANO and Smart Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMENS.2005.46","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Summary form only given, as follows. Semiconductor spintronics aims to develop novel sensor, memory and logic devices by manipulating the spin states of carriers in semiconducting materials. This talk will focus on electrical spin injection into semiconductors, which is a prerequisite for spintronics and, in particular, on tunnel based spin injectors that are potentially operable above room temperature. The spin polarization of the electron current within the semiconductor is detected by measuring the circular polarization of the electroluminescence from a quantum well light emitting diode structure. The temperature and bias dependence of the electroluminescence polarization provides insight into the spin relaxation mechanisms within the semiconductor heterostructure.