三栅极纳米线场效应晶体管中的传输：纳米尺度的截面效应

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2016-10-01 DOI:10.1109/S3S.2016.7804374

J. Pelloux-Prayer, M. Cassé, S. Barraud, F. Triozon, Z. Zeng, Y. Niquet, J. Rouviere, G. Reimbold

{"title":"三栅极纳米线场效应晶体管中的传输：纳米尺度的截面效应","authors":"J. Pelloux-Prayer, M. Cassé, S. Barraud, F. Triozon, Z. Zeng, Y. Niquet, J. Rouviere, G. Reimbold","doi":"10.1109/S3S.2016.7804374","DOIUrl":null,"url":null,"abstract":"We hereby present a study of electron mobility in Tri-gate SOI Nanowire (TGNW) transistors in a wide range of temperature from 20K up to 425K. We compared the temperature dependence for different values of the NW cross-section (width and height) and different crystallographic orientations of the conduction channel. We demonstrate that the electron mobility in narrow TGNWs is limited by surface roughness in the sidewall inversion surface whatever the NW orientation [110]/(100) or [100]/(100). We have also evidenced an enhanced temperature dependence, attributed to phonon scattering, as the cross-section of the NW decreases below a critical dimension (≈80nm).","PeriodicalId":145660,"journal":{"name":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale\",\"authors\":\"J. Pelloux-Prayer, M. Cassé, S. Barraud, F. Triozon, Z. Zeng, Y. Niquet, J. Rouviere, G. Reimbold\",\"doi\":\"10.1109/S3S.2016.7804374\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We hereby present a study of electron mobility in Tri-gate SOI Nanowire (TGNW) transistors in a wide range of temperature from 20K up to 425K. We compared the temperature dependence for different values of the NW cross-section (width and height) and different crystallographic orientations of the conduction channel. We demonstrate that the electron mobility in narrow TGNWs is limited by surface roughness in the sidewall inversion surface whatever the NW orientation [110]/(100) or [100]/(100). We have also evidenced an enhanced temperature dependence, attributed to phonon scattering, as the cross-section of the NW decreases below a critical dimension (≈80nm).\",\"PeriodicalId\":145660,\"journal\":{\"name\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2016.7804374\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2016.7804374","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文研究了三栅极SOI纳米线(TGNW)晶体管在20K至425K宽温度范围内的电子迁移率。我们比较了不同的NW横截面(宽度和高度)值和不同的晶体取向对传导通道的温度依赖性。我们证明，无论NW取向[110]/(100)或[100]/(100)，窄TGNWs中的电子迁移率都受到侧壁反转表面粗糙度的限制。我们还证明了声子散射对温度的依赖性增强，因为NW的横截面减小到临界尺寸(≈80nm)以下。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale

We hereby present a study of electron mobility in Tri-gate SOI Nanowire (TGNW) transistors in a wide range of temperature from 20K up to 425K. We compared the temperature dependence for different values of the NW cross-section (width and height) and different crystallographic orientations of the conduction channel. We demonstrate that the electron mobility in narrow TGNWs is limited by surface roughness in the sidewall inversion surface whatever the NW orientation [110]/(100) or [100]/(100). We have also evidenced an enhanced temperature dependence, attributed to phonon scattering, as the cross-section of the NW decreases below a critical dimension (≈80nm).

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2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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