Y. Yamamoto, H. Makiyama, T. Yamashita, H. Oda, S. Kamohara, N. Sugii, Y. Yamaguchi, T. Mizutani, M. Kobayashi, T. Hiramoto
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Novel single p+poly-Si/Hf/SiON gate stack technology on silicon-on-thin-buried-oxide (SOTB) for ultra-low leakage applications
We demonstrate a cost effective 65-nm SOTB CMOS technology for ultra-low leakage applications. Novel single p+poly-Si/Hf/SiON gate stack of mid-gap work function and precise GIDL control achieved ultra-low leakage of 0.2 pA/μm, which corresponds to approx. 100nA/chip (100k gate logic). Now the SOTB technology can provide three options from ultra-low voltage to ultra-low leakage that covers a wide variety of applications in the Internet of Things (IoT) era.
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