NTBI与辐照诱导界面态的比较

2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2013-10-01 DOI:10.1109/IIRW.2013.6804183

K. Kambour, D. Nguyen, C. Kouhestani, R. Devine

{"title":"NTBI与辐照诱导界面态的比较","authors":"K. Kambour, D. Nguyen, C. Kouhestani, R. Devine","doi":"10.1109/IIRW.2013.6804183","DOIUrl":null,"url":null,"abstract":"The generation of interface states created by depassivating dangling bonds at the interface between the gate dielectric and silicon substrate is important for both the growth of Negative Bias Temperature Instability threshold voltage shift in MOSFETs and the radiation sensitivity of the devices. In this paper we present results comparing the generation of interface states for both processes and their possible annealing at high temperatures.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Comparison of NTBI and irradiation induced interface states\",\"authors\":\"K. Kambour, D. Nguyen, C. Kouhestani, R. Devine\",\"doi\":\"10.1109/IIRW.2013.6804183\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The generation of interface states created by depassivating dangling bonds at the interface between the gate dielectric and silicon substrate is important for both the growth of Negative Bias Temperature Instability threshold voltage shift in MOSFETs and the radiation sensitivity of the devices. In this paper we present results comparing the generation of interface states for both processes and their possible annealing at high temperatures.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804183\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

在栅极介质和硅衬底之间的界面处，通过消除悬垂键产生的界面态对于mosfet中负偏置温度不稳定性阈值电压位移的增长和器件的辐射灵敏度都是重要的。在本文中，我们比较了这两种工艺的界面状态的产生及其在高温下可能的退火。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Comparison of NTBI and irradiation induced interface states

The generation of interface states created by depassivating dangling bonds at the interface between the gate dielectric and silicon substrate is important for both the growth of Negative Bias Temperature Instability threshold voltage shift in MOSFETs and the radiation sensitivity of the devices. In this paper we present results comparing the generation of interface states for both processes and their possible annealing at high temperatures.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE International Integrated Reliability Workshop Final Report

自引率

0.00%

发文量