{"title":"用于RFID的高精度低功耗CMOS带隙","authors":"Xian Zhang, Yong Xu","doi":"10.1109/ASICON47005.2019.8983448","DOIUrl":null,"url":null,"abstract":"In this paper, a low power high precision bandgap reference with a third-order temperature compensation and a high slope positive-temperature coefficient voltage are designed using a SMIC 180 nm BiCMOS process. The structure of positive temperature coefficient current and negative temperature coefficient current subtraction are used to obtain a high slope positive temperature coefficient current, which is more convenient for sampling of the rear circuit. The simulation show when the temperature is changed within the range of −25 to 100 °C, the temperature coefficient of the output reference voltage is 3.8ppm/°C, the slope of the PTAT voltage is 5.13mV/°C the PSRR at low frequency is −62dB. At a power supply voltage of 1.8V, the overall power consumption is 50uW.","PeriodicalId":319342,"journal":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High precision low power CMOS bandgap for RFID\",\"authors\":\"Xian Zhang, Yong Xu\",\"doi\":\"10.1109/ASICON47005.2019.8983448\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a low power high precision bandgap reference with a third-order temperature compensation and a high slope positive-temperature coefficient voltage are designed using a SMIC 180 nm BiCMOS process. The structure of positive temperature coefficient current and negative temperature coefficient current subtraction are used to obtain a high slope positive temperature coefficient current, which is more convenient for sampling of the rear circuit. The simulation show when the temperature is changed within the range of −25 to 100 °C, the temperature coefficient of the output reference voltage is 3.8ppm/°C, the slope of the PTAT voltage is 5.13mV/°C the PSRR at low frequency is −62dB. At a power supply voltage of 1.8V, the overall power consumption is 50uW.\",\"PeriodicalId\":319342,\"journal\":{\"name\":\"2019 IEEE 13th International Conference on ASIC (ASICON)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 13th International Conference on ASIC (ASICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON47005.2019.8983448\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 13th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON47005.2019.8983448","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, a low power high precision bandgap reference with a third-order temperature compensation and a high slope positive-temperature coefficient voltage are designed using a SMIC 180 nm BiCMOS process. The structure of positive temperature coefficient current and negative temperature coefficient current subtraction are used to obtain a high slope positive temperature coefficient current, which is more convenient for sampling of the rear circuit. The simulation show when the temperature is changed within the range of −25 to 100 °C, the temperature coefficient of the output reference voltage is 3.8ppm/°C, the slope of the PTAT voltage is 5.13mV/°C the PSRR at low frequency is −62dB. At a power supply voltage of 1.8V, the overall power consumption is 50uW.
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