传输线中的高频损耗是由SIMOX、大块硅和晶圆键合形成的贫硅/硅结构造成的

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819843

M. Johansson, M. Bergh, S. Bengtsson

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引用次数: 2

摘要

晶圆键合和蚀刻回已经被用来制造一种硅材料作为高频应用的衬底。围绕键合硅/硅界面的空间电荷区耗尽硅，从而在高频下引起半绝缘行为。通过对金属传输线的测量对形成的材料进行了表征，并将结果与SIMOX和块状硅片的类似测量结果进行了比较。

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High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding

Wafer bonding and etch-back has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge region surrounding the bonded silicon/silicon interface depletes the silicon, thereby causing semi-insulating behaviour at high frequencies. The formed material was characterized using measurements on metal transmission lines and the results were compared to similar measurements on SIMOX and bulk silicon wafers.

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1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

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