M. Miyake, M. Ueno, J. Nakashima, H. Masuoka, U. Feldmann, H. Mattausch, M. Miura-Mattausch, T. Ogawa, T. Ueta
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Temperature dependence of switching performance in IGBT circuits and its compact modeling
We have developed the compact IGBT model HiSIM-IGBT, based on a complete solution for the potential distribution, which connects the surface-potential of the MOS-FET part to the bipolar part by an iterative procedure in a self-consistent way. Here we report the self-heating extension of HiSIM-IGBT, a compact model for power diode including the reverse recovery effect and the model application to accurate prediction of experimental switching characteristics.
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