{"title":"基于新型比较器的GaAs多位δ - σ A/D转换器设计","authors":"R. Hickling, M. Yagi, H. H. Salman","doi":"10.1109/GAAS.1995.529017","DOIUrl":null,"url":null,"abstract":"In this paper, the design of multibit delta-sigma converters based upon a new comparator bank structure is described. The comparator bank approach eliminates the need for comparator threshold terminals, allowing each of the individual latched comparators to operate upon the same differential input signal. This new comparator design was incorporated into a complete four-bit delta-sigma modulator which was fabricated on a 0.6 /spl mu/m GaAs MESFET process.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaAs multibit delta-sigma A/D converters based upon a new comparator design\",\"authors\":\"R. Hickling, M. Yagi, H. H. Salman\",\"doi\":\"10.1109/GAAS.1995.529017\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the design of multibit delta-sigma converters based upon a new comparator bank structure is described. The comparator bank approach eliminates the need for comparator threshold terminals, allowing each of the individual latched comparators to operate upon the same differential input signal. This new comparator design was incorporated into a complete four-bit delta-sigma modulator which was fabricated on a 0.6 /spl mu/m GaAs MESFET process.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.529017\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.529017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs multibit delta-sigma A/D converters based upon a new comparator design
In this paper, the design of multibit delta-sigma converters based upon a new comparator bank structure is described. The comparator bank approach eliminates the need for comparator threshold terminals, allowing each of the individual latched comparators to operate upon the same differential input signal. This new comparator design was incorporated into a complete four-bit delta-sigma modulator which was fabricated on a 0.6 /spl mu/m GaAs MESFET process.