低功率宽调谐范围VCO与耦合LC油箱

2011 IEEE International SOC Conference Pub Date : 2011-11-21 DOI:10.1109/SOCC.2011.6085075

Shouxian Mou, Kaixue Ma, K. Yeo, N. Mahalingam, Bharatha Kumar Thangarasu

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引用次数: 2

摘要

提出了一种采用0.18 μ m SiGe BiCMOS技术，仅采用CMOS器件的12GHz压控振荡器。为了改善调谐范围和相位噪声，提出了一种采用具有固定可调谐电容元件的强磁耦合LC槽的技术。VCO实现了4.3GHz(36%)的宽调谐范围，功耗仅为4.5mW。所提出的包含缓冲级的VCO芯片面积为0.17mm2，并且可以很容易地与其他模块集成在片上。

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A low power wide tuning range VCO with coupled LC tanks

A 12GHz VCO fabricated in a 0.18µm SiGe BiCMOS technology with only CMOS devices, is presented. To improve tuning range and phase noise, a technique using strongly magnetic coupled LC tanks with fixed and tunable capacitive elements is proposed. The VCO achieves wide tuning range of 4.3GHz (36%) with only 4.5mW power consumption. The proposed VCO including buffer stage occupies a chip area of 0.17mm2, and can be easily integrated on-chip with other blocks.

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2011 IEEE International SOC Conference

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