一种新的简化、可靠的基于夹紧冷场效应管s参数的HEMT建模方法

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Pub Date : 2000-06-11 DOI:10.1109/MWSYM.2000.862234

W.N. Mwema, G. Kompa

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引用次数: 6

摘要

本文描述了一种直接从箝位冷场效应管s参数中自动确定18个分布场效应管寄生元件起始值的技术。本文给出了该方法的优化结果，结果表明起始向量与解非常接近。在综合和实测s参数数据的基础上讨论了该方法。

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A new simplified and reliable HEMT modelling approach using pinched cold FET S-parameters

An automatic technique for determining starting values for the parasitic elements of a distributed 18 element FET directly from pinched cold FET S-parameters is described. Optimization results using this technique are presented and show that the starting vector is very close to the solution. The approach is discussed on the basis of synthesized and measured S-parameter data.

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来源期刊

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

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