{"title":"从金属互连中WLR ISOEM和PLR EM的角度探讨2端和4端开尔文结构","authors":"Dingrui Zhang, Weihai Fan, Jizhou Li, Kelly Yang","doi":"10.1109/CSTIC52283.2021.9461431","DOIUrl":null,"url":null,"abstract":"Electromigration performance is a key index for BEOL process reliability, in this paper, 2-terminal and 4-terminal kelvin structure EM tests are performed in both WLR IsoEM and PLR EM method, it's found 2-terminal WLR IsoEM test time is faster than that of 4 terminal kelvin structure under the same desired temperature stress condition, the TTF ratio is about 0.6 and 0.5 times for narrow metal (MxN) and wide metal (MxW) respectively. Besides, Iso-EM TTF increases with the rising of the chuck temperature and lower layer metal shows worse than the upper. While on the contrary, 2 terminal PLR EM TTF is bigger than that of 4 terminal. This distinct observation is investigated and its mechanism is discussed in the paper.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation Between 2- Terminal and 4- Terminal Kelvin Structure in Terms Of WLR ISOEM And PLR EM for Metal Interconnection\",\"authors\":\"Dingrui Zhang, Weihai Fan, Jizhou Li, Kelly Yang\",\"doi\":\"10.1109/CSTIC52283.2021.9461431\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electromigration performance is a key index for BEOL process reliability, in this paper, 2-terminal and 4-terminal kelvin structure EM tests are performed in both WLR IsoEM and PLR EM method, it's found 2-terminal WLR IsoEM test time is faster than that of 4 terminal kelvin structure under the same desired temperature stress condition, the TTF ratio is about 0.6 and 0.5 times for narrow metal (MxN) and wide metal (MxW) respectively. Besides, Iso-EM TTF increases with the rising of the chuck temperature and lower layer metal shows worse than the upper. While on the contrary, 2 terminal PLR EM TTF is bigger than that of 4 terminal. This distinct observation is investigated and its mechanism is discussed in the paper.\",\"PeriodicalId\":186529,\"journal\":{\"name\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC52283.2021.9461431\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461431","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
电迁移性能是BEOL工艺可靠性的关键指标,本文采用WLR IsoEM法和PLR EM法分别进行了2端和4端kelvin结构的电磁测试,发现在相同的期望温度应力条件下,2端WLR IsoEM测试时间比4端kelvin结构快,窄金属(MxN)和宽金属(MxW)的TTF比分别为0.6倍和0.5倍。此外,随着卡盘温度的升高,Iso-EM TTF逐渐增大,且下层金属比上层金属表现得更差。相反,2端子的PLR EM TTF大于4端子。本文对这一独特现象进行了研究,并对其机理进行了讨论。
Investigation Between 2- Terminal and 4- Terminal Kelvin Structure in Terms Of WLR ISOEM And PLR EM for Metal Interconnection
Electromigration performance is a key index for BEOL process reliability, in this paper, 2-terminal and 4-terminal kelvin structure EM tests are performed in both WLR IsoEM and PLR EM method, it's found 2-terminal WLR IsoEM test time is faster than that of 4 terminal kelvin structure under the same desired temperature stress condition, the TTF ratio is about 0.6 and 0.5 times for narrow metal (MxN) and wide metal (MxW) respectively. Besides, Iso-EM TTF increases with the rising of the chuck temperature and lower layer metal shows worse than the upper. While on the contrary, 2 terminal PLR EM TTF is bigger than that of 4 terminal. This distinct observation is investigated and its mechanism is discussed in the paper.