从金属互连中WLR ISOEM和PLR EM的角度探讨2端和4端开尔文结构

Dingrui Zhang, Weihai Fan, Jizhou Li, Kelly Yang
{"title":"从金属互连中WLR ISOEM和PLR EM的角度探讨2端和4端开尔文结构","authors":"Dingrui Zhang, Weihai Fan, Jizhou Li, Kelly Yang","doi":"10.1109/CSTIC52283.2021.9461431","DOIUrl":null,"url":null,"abstract":"Electromigration performance is a key index for BEOL process reliability, in this paper, 2-terminal and 4-terminal kelvin structure EM tests are performed in both WLR IsoEM and PLR EM method, it's found 2-terminal WLR IsoEM test time is faster than that of 4 terminal kelvin structure under the same desired temperature stress condition, the TTF ratio is about 0.6 and 0.5 times for narrow metal (MxN) and wide metal (MxW) respectively. Besides, Iso-EM TTF increases with the rising of the chuck temperature and lower layer metal shows worse than the upper. While on the contrary, 2 terminal PLR EM TTF is bigger than that of 4 terminal. This distinct observation is investigated and its mechanism is discussed in the paper.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation Between 2- Terminal and 4- Terminal Kelvin Structure in Terms Of WLR ISOEM And PLR EM for Metal Interconnection\",\"authors\":\"Dingrui Zhang, Weihai Fan, Jizhou Li, Kelly Yang\",\"doi\":\"10.1109/CSTIC52283.2021.9461431\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electromigration performance is a key index for BEOL process reliability, in this paper, 2-terminal and 4-terminal kelvin structure EM tests are performed in both WLR IsoEM and PLR EM method, it's found 2-terminal WLR IsoEM test time is faster than that of 4 terminal kelvin structure under the same desired temperature stress condition, the TTF ratio is about 0.6 and 0.5 times for narrow metal (MxN) and wide metal (MxW) respectively. Besides, Iso-EM TTF increases with the rising of the chuck temperature and lower layer metal shows worse than the upper. While on the contrary, 2 terminal PLR EM TTF is bigger than that of 4 terminal. This distinct observation is investigated and its mechanism is discussed in the paper.\",\"PeriodicalId\":186529,\"journal\":{\"name\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC52283.2021.9461431\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461431","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

电迁移性能是BEOL工艺可靠性的关键指标,本文采用WLR IsoEM法和PLR EM法分别进行了2端和4端kelvin结构的电磁测试,发现在相同的期望温度应力条件下,2端WLR IsoEM测试时间比4端kelvin结构快,窄金属(MxN)和宽金属(MxW)的TTF比分别为0.6倍和0.5倍。此外,随着卡盘温度的升高,Iso-EM TTF逐渐增大,且下层金属比上层金属表现得更差。相反,2端子的PLR EM TTF大于4端子。本文对这一独特现象进行了研究,并对其机理进行了讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation Between 2- Terminal and 4- Terminal Kelvin Structure in Terms Of WLR ISOEM And PLR EM for Metal Interconnection
Electromigration performance is a key index for BEOL process reliability, in this paper, 2-terminal and 4-terminal kelvin structure EM tests are performed in both WLR IsoEM and PLR EM method, it's found 2-terminal WLR IsoEM test time is faster than that of 4 terminal kelvin structure under the same desired temperature stress condition, the TTF ratio is about 0.6 and 0.5 times for narrow metal (MxN) and wide metal (MxW) respectively. Besides, Iso-EM TTF increases with the rising of the chuck temperature and lower layer metal shows worse than the upper. While on the contrary, 2 terminal PLR EM TTF is bigger than that of 4 terminal. This distinct observation is investigated and its mechanism is discussed in the paper.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信