用MR-DCIV方法了解pldmosfet的自热增强降解

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898175

Yandong He, Ganggang Zhang, Xing Zhang

{"title":"用MR-DCIV方法了解pldmosfet的自热增强降解","authors":"Yandong He, Ganggang Zhang, Xing Zhang","doi":"10.1109/IPFA.2014.6898175","DOIUrl":null,"url":null,"abstract":"Self-heating enhanced degradation in pLDMOSFETs was studied by non-destructive MR-DCIV method. Due to self-heating effect in pLDMOSFETs, several times larger MR-DCIV degradation per finger was observed for multi-finger devices with higher temperature rise and less channel edge heat dissipation. Our study has shown that self-heating induced degradation shared the similar trends and mechanism to NBTI.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Understanding of self-heating enhanced degradation in pLDMOSFETs by MR-DCIV method\",\"authors\":\"Yandong He, Ganggang Zhang, Xing Zhang\",\"doi\":\"10.1109/IPFA.2014.6898175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Self-heating enhanced degradation in pLDMOSFETs was studied by non-destructive MR-DCIV method. Due to self-heating effect in pLDMOSFETs, several times larger MR-DCIV degradation per finger was observed for multi-finger devices with higher temperature rise and less channel edge heat dissipation. Our study has shown that self-heating induced degradation shared the similar trends and mechanism to NBTI.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898175\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用非破坏性MR-DCIV方法研究了pldmosfet的自热增强降解。由于pldmosfet中的自热效应，对于具有较高温升和较少通道边缘散热的多指器件，观察到每指MR-DCIV衰减数倍。我们的研究表明，自热诱导降解与NBTI具有相似的趋势和机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Understanding of self-heating enhanced degradation in pLDMOSFETs by MR-DCIV method

Self-heating enhanced degradation in pLDMOSFETs was studied by non-destructive MR-DCIV method. Due to self-heating effect in pLDMOSFETs, several times larger MR-DCIV degradation per finger was observed for multi-finger devices with higher temperature rise and less channel edge heat dissipation. Our study has shown that self-heating induced degradation shared the similar trends and mechanism to NBTI.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

自引率

0.00%

发文量