一个包含散焦效应的CMP过程电容变化的仿真系统

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871218

T. Ohta, M. Fujinaga, M. Kimura, T. Wada, K. Nishi

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引用次数: 0

摘要

我们开发了一个包括CMP模型在内的全互连仿真系统。利用该系统模拟了CMP在全局非均匀表面上焦点效应引起的图案宽度差引起的电容变化。本文还展示了一种方法，以减少由这些模拟得出的CMP过程引起的电容变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A simulation system for capacitance variation by CMP process including defocus effect

We have developed a total interconnect simulation system including a CMP model. The capacitance variation due to pattern width difference from focus effects on a globally nonuniform surface by CMP is simulated with this system. The paper also shows a way to reduce the capacitance variation due to CMP processes derived from these simulations.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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