{"title":"用布里渊散射法通过机电耦合测量ZnO单晶的电性能","authors":"T. Yanagitani, H. Sano, M. Matsukawa","doi":"10.1109/ULTSYM.2009.5441851","DOIUrl":null,"url":null,"abstract":"In-plane directional electric property measurement in the semiconductors via electromechanical coupling is proposed. To estimate the properties in the crystal with less than 1 Ω·m (which is general value in intrinsic wide band-gap semiconductors), in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal have been theoretically and experimentally investigated, using Brillouin scattering method. Distribution of electric properties in the crystal, also separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement.","PeriodicalId":368182,"journal":{"name":"2009 IEEE International Ultrasonics Symposium","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Measurement of electric properties in a ZnO single crystal via electromechanical coupling using Brillouin scattering method\",\"authors\":\"T. Yanagitani, H. Sano, M. Matsukawa\",\"doi\":\"10.1109/ULTSYM.2009.5441851\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In-plane directional electric property measurement in the semiconductors via electromechanical coupling is proposed. To estimate the properties in the crystal with less than 1 Ω·m (which is general value in intrinsic wide band-gap semiconductors), in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal have been theoretically and experimentally investigated, using Brillouin scattering method. Distribution of electric properties in the crystal, also separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement.\",\"PeriodicalId\":368182,\"journal\":{\"name\":\"2009 IEEE International Ultrasonics Symposium\",\"volume\":\"123 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Ultrasonics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.2009.5441851\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Ultrasonics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2009.5441851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurement of electric properties in a ZnO single crystal via electromechanical coupling using Brillouin scattering method
In-plane directional electric property measurement in the semiconductors via electromechanical coupling is proposed. To estimate the properties in the crystal with less than 1 Ω·m (which is general value in intrinsic wide band-gap semiconductors), in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal have been theoretically and experimentally investigated, using Brillouin scattering method. Distribution of electric properties in the crystal, also separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement.
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