{"title":"具有垂直沟道的miss晶体管结构中金属化Ti-TiN扩散势垒层的沉积特征和特性研究","authors":"V. S. Gornostay-Polsky, V. Shevyakov","doi":"10.1117/12.2624508","DOIUrl":null,"url":null,"abstract":"The paper presents the results of studying the process of deposition of a Ti-TiN layer coating in a trenches in a silicon substrate. It is shown that one of the promising methods for the deposition of organometallic compounds from the gas phase is MOCVD, characterized by an increased conformity of the film deposition of on a relief surface. The data showing the high-quality filling of trenches in silicon with two-layer Ti-TiN coating are presented.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the deposition features and characteristics of diffusion-barrier layers of Ti-TiN for metallization in MIS-transistor structures with a vertical channel\",\"authors\":\"V. S. Gornostay-Polsky, V. Shevyakov\",\"doi\":\"10.1117/12.2624508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the results of studying the process of deposition of a Ti-TiN layer coating in a trenches in a silicon substrate. It is shown that one of the promising methods for the deposition of organometallic compounds from the gas phase is MOCVD, characterized by an increased conformity of the film deposition of on a relief surface. The data showing the high-quality filling of trenches in silicon with two-layer Ti-TiN coating are presented.\",\"PeriodicalId\":388511,\"journal\":{\"name\":\"International Conference on Micro- and Nano-Electronics\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Micro- and Nano-Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2624508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Micro- and Nano-Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2624508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of the deposition features and characteristics of diffusion-barrier layers of Ti-TiN for metallization in MIS-transistor structures with a vertical channel
The paper presents the results of studying the process of deposition of a Ti-TiN layer coating in a trenches in a silicon substrate. It is shown that one of the promising methods for the deposition of organometallic compounds from the gas phase is MOCVD, characterized by an increased conformity of the film deposition of on a relief surface. The data showing the high-quality filling of trenches in silicon with two-layer Ti-TiN coating are presented.
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