高增益500ghz InP HBT功率放大器

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI:10.1109/BCICTS50416.2021.9682464

J. Cheron, Rob D. Jones, R. Chamberlin, Dylan F. Williams, M. Urteaga, Kassiopeia A. Smith, N. Jungwirth, B. Bosworth, C. Long, N. Orloff, P. Aaen, A. Feldman

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引用次数: 2

摘要

我们报告了两个工作在500 GHz的太赫兹单片集成电路(TMIC)放大器。这款6级单端功率放大器采用Teledyne的130 nm磷化铟双异质结双极晶体管共基配置。第一放大器的阻抗匹配网络采用分流线设计，第二放大器的阻抗匹配网络采用金属-绝缘子-金属并联电容器设计。我们测量并比较了两种放大器在500 GHz左右的小信号和大信号性能。虽然两种tmic具有相似的换能器增益(24 dB)和输出功率(高达- 0.7 dBm)，但我们通过设计分流线的放大器获得了更好的良率。

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High-Gain 500-GHz InP HBT Power Amplifiers

We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm indium-phosphide double heterojunction bipolar transistors in a common-base configuration. The impedance matching networks of the first amplifier are designed with shunt lines while the second amplifier uses shunt metal-insulator-metal capacitors. We measured and compared the small-signal and large-signal performance of the two amplifiers around 500 GHz. Although the two TMICs exhibit a similar transducer gain (24 dB) and output power (up to −0.7 dBm), we obtained better yield with the amplifiers designed with shunt lines.

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2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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