M. Ramírez-Como, A. Sacramento, José G. Sánchez, M. Estrada, V. S. Balderrama, L. Marsal
{"title":"孔阻挡层对溶液处理小分子太阳能电池性能的影响","authors":"M. Ramírez-Como, A. Sacramento, José G. Sánchez, M. Estrada, V. S. Balderrama, L. Marsal","doi":"10.1109/LAEDC51812.2021.9437931","DOIUrl":null,"url":null,"abstract":"In this study, we report the use of poly [(9,9-bis (30- (N,N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7- (9,9-dioctylfluorene) (PFN) as hole blocking layer (HBL) in inverted small-molecule solar cells (SM-iOSCs) using a bulk heterojunction of p-DTS(FBTTh2)2 as donor material and PC70BM as acceptor material. The behavior of these devices is compared to those SM-iOSCs where the HBL was zinc oxide (ZnO). Under 1 sun illumination, devices exhibited a power conversion efficiency (PCE) of 6.75%. It is demonstrated, through analysis of the external quantum efficiency (EQE), abortion UV-vis and atomic force microscopy of the active layer, that charge transport is the limiting factor in the performance of the cells, directly affecting the short circuit current (JSC).","PeriodicalId":112590,"journal":{"name":"2021 IEEE Latin America Electron Devices Conference (LAEDC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Impact of Hole Blocking Layer on the Performance of Solution-Processed Small Molecule Solar Cells\",\"authors\":\"M. Ramírez-Como, A. Sacramento, José G. Sánchez, M. Estrada, V. S. Balderrama, L. Marsal\",\"doi\":\"10.1109/LAEDC51812.2021.9437931\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we report the use of poly [(9,9-bis (30- (N,N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7- (9,9-dioctylfluorene) (PFN) as hole blocking layer (HBL) in inverted small-molecule solar cells (SM-iOSCs) using a bulk heterojunction of p-DTS(FBTTh2)2 as donor material and PC70BM as acceptor material. The behavior of these devices is compared to those SM-iOSCs where the HBL was zinc oxide (ZnO). Under 1 sun illumination, devices exhibited a power conversion efficiency (PCE) of 6.75%. It is demonstrated, through analysis of the external quantum efficiency (EQE), abortion UV-vis and atomic force microscopy of the active layer, that charge transport is the limiting factor in the performance of the cells, directly affecting the short circuit current (JSC).\",\"PeriodicalId\":112590,\"journal\":{\"name\":\"2021 IEEE Latin America Electron Devices Conference (LAEDC)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE Latin America Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC51812.2021.9437931\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Latin America Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC51812.2021.9437931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of Hole Blocking Layer on the Performance of Solution-Processed Small Molecule Solar Cells
In this study, we report the use of poly [(9,9-bis (30- (N,N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7- (9,9-dioctylfluorene) (PFN) as hole blocking layer (HBL) in inverted small-molecule solar cells (SM-iOSCs) using a bulk heterojunction of p-DTS(FBTTh2)2 as donor material and PC70BM as acceptor material. The behavior of these devices is compared to those SM-iOSCs where the HBL was zinc oxide (ZnO). Under 1 sun illumination, devices exhibited a power conversion efficiency (PCE) of 6.75%. It is demonstrated, through analysis of the external quantum efficiency (EQE), abortion UV-vis and atomic force microscopy of the active layer, that charge transport is the limiting factor in the performance of the cells, directly affecting the short circuit current (JSC).