Abhinav Agarwal, Albert Gural, M. Monge, Dvin Adalian, Samson Chen, A. Scherer, A. Emami
{"title":"一种4μW、基于adpll的65nm CMOS可植入安培生物传感器","authors":"Abhinav Agarwal, Albert Gural, M. Monge, Dvin Adalian, Samson Chen, A. Scherer, A. Emami","doi":"10.23919/VLSIC.2017.8008566","DOIUrl":null,"url":null,"abstract":"This paper presents a fully implantable, wirelessly powered subcutaneous amperometric biosensor. We propose a novel ultra-low power all-digital phase-locked loop (ADPLL) based potentiostat architecture for electrochemical sensing. The system is wirelessly powered by near-field RF coupling of an on-chip antenna to an external coil at 915 MHz. Bi-directional wireless telemetry supports data transmission from the sensor to the external reader (uplink) via backscattering, and reconfiguration of the sensor chip over the RF downlink. The 1.2×1.2 mm2 prototype is fabricated in TSMC 65nm CMOS process. The potentiostat achieves a 100pA sensitivity over a full scale current range of 0–350nA. The total power consumption of the system is 4μW.","PeriodicalId":176340,"journal":{"name":"2017 Symposium on VLSI Circuits","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A 4μW, ADPLL-based implantable amperometric biosensor in 65nm CMOS\",\"authors\":\"Abhinav Agarwal, Albert Gural, M. Monge, Dvin Adalian, Samson Chen, A. Scherer, A. Emami\",\"doi\":\"10.23919/VLSIC.2017.8008566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a fully implantable, wirelessly powered subcutaneous amperometric biosensor. We propose a novel ultra-low power all-digital phase-locked loop (ADPLL) based potentiostat architecture for electrochemical sensing. The system is wirelessly powered by near-field RF coupling of an on-chip antenna to an external coil at 915 MHz. Bi-directional wireless telemetry supports data transmission from the sensor to the external reader (uplink) via backscattering, and reconfiguration of the sensor chip over the RF downlink. The 1.2×1.2 mm2 prototype is fabricated in TSMC 65nm CMOS process. The potentiostat achieves a 100pA sensitivity over a full scale current range of 0–350nA. The total power consumption of the system is 4μW.\",\"PeriodicalId\":176340,\"journal\":{\"name\":\"2017 Symposium on VLSI Circuits\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIC.2017.8008566\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2017.8008566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4μW, ADPLL-based implantable amperometric biosensor in 65nm CMOS
This paper presents a fully implantable, wirelessly powered subcutaneous amperometric biosensor. We propose a novel ultra-low power all-digital phase-locked loop (ADPLL) based potentiostat architecture for electrochemical sensing. The system is wirelessly powered by near-field RF coupling of an on-chip antenna to an external coil at 915 MHz. Bi-directional wireless telemetry supports data transmission from the sensor to the external reader (uplink) via backscattering, and reconfiguration of the sensor chip over the RF downlink. The 1.2×1.2 mm2 prototype is fabricated in TSMC 65nm CMOS process. The potentiostat achieves a 100pA sensitivity over a full scale current range of 0–350nA. The total power consumption of the system is 4μW.