揭示富ge GST ePCM技术保留物理机制

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10118155

L. Laurin, M. Baldo, E. Petroni, G. Samanni, Lorenzo Turconi, A. Motta, M. Borghi, A. Serafini, D. Codegoni, M. Scuderi, S. Ran, A. Claverie, D. Ielmini, R. Annunziata, A. Redaelli

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引用次数: 0

摘要

在这项工作中，全面研究了通过耦合电和物理表征实现富锗相变存储器设置和复位状态保持。通过高分辨率扫描透射电子显微镜首次证实了PCM器件有源区域内存在无定形残余。通过电学表征和建模分析，研究了这些地层的作用。通过对低、高态电阻行为的比较，用相同的框架对两种状态下的保留物理进行了解析建模。

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Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology

In this work, a comprehensive study of Ge-rich Phase Change Memory set and reset state retention realized by coupling electrical and physical characterizations is presented. The presence of amorphous residuals inside the active region of PCM devices is, for the first time, demonstrated through High Resolution Scanning Transmission Electron Microscopy. The role of such formations was studied by means of electrical character-ization and supported by modeling analysis. By comparing the low and high state resistive behavior the retention physics has been analytically modeled with the same framework for both states.

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2023 IEEE International Reliability Physics Symposium (IRPS)

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