{"title":"基于浮门和多值逻辑的超低压高速CMOS全加法器","authors":"Y. Berg","doi":"10.1109/ISMVL.2011.11","DOIUrl":null,"url":null,"abstract":"In this paper we present a novel high speed and ultra low-voltage full adder circuit based on ultra low-voltage semi floating-gate CMOS logic. The full adder circuit contains a high speed ultraslow-voltage carry generator circuit and a multiple-valued intermediate representation of the summation. The full adder is suitable for low-voltage serial full adder design. Simulated data presented is valid for a 90nm TSMC CMOS process.","PeriodicalId":234611,"journal":{"name":"2011 41st IEEE International Symposium on Multiple-Valued Logic","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ultra Low-Voltage and High-Speed CMOS Full Adder Using Floating-Gates and Multiple-Valued Logic\",\"authors\":\"Y. Berg\",\"doi\":\"10.1109/ISMVL.2011.11\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a novel high speed and ultra low-voltage full adder circuit based on ultra low-voltage semi floating-gate CMOS logic. The full adder circuit contains a high speed ultraslow-voltage carry generator circuit and a multiple-valued intermediate representation of the summation. The full adder is suitable for low-voltage serial full adder design. Simulated data presented is valid for a 90nm TSMC CMOS process.\",\"PeriodicalId\":234611,\"journal\":{\"name\":\"2011 41st IEEE International Symposium on Multiple-Valued Logic\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 41st IEEE International Symposium on Multiple-Valued Logic\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISMVL.2011.11\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 41st IEEE International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.2011.11","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra Low-Voltage and High-Speed CMOS Full Adder Using Floating-Gates and Multiple-Valued Logic
In this paper we present a novel high speed and ultra low-voltage full adder circuit based on ultra low-voltage semi floating-gate CMOS logic. The full adder circuit contains a high speed ultraslow-voltage carry generator circuit and a multiple-valued intermediate representation of the summation. The full adder is suitable for low-voltage serial full adder design. Simulated data presented is valid for a 90nm TSMC CMOS process.