用水平集方法模拟沉积和蚀刻过程的三维地形

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI:10.1109/ICMEL.2004.1314606

A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr

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引用次数: 2

摘要

我们提出了水平集和快速推进方法在三维沉积和蚀刻过程中硅片表面形貌模拟中的应用。这些模拟依赖于许多技术，包括窄带水平集方法、Eikonal方程的快速推进、速度函数的扩展、传输模型、可见性确定和迭代方程求解器。

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Three-dimensional topography simulation for deposition and etching processes using a level set method

We present, the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.

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来源期刊

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)

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