硅纳米级器件的特性

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871237

T. Hiramoto, H. Majima

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引用次数: 1

摘要

在室温和低温下成功制备了10纳米尺度的极小硅MOS器件并进行了表征。在这种小型器件中，即使在室温下，量子约束效应和单电子充电效应也表现在器件特性上。还讨论了纳米级mosfet的器件建模挑战。

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Characteristics of silicon nano-scale devices

Extremely small silicon MOS devices in a 10-nm scale are successfully fabricated and characterized at room temperature and low temperatures. In such small devices, the quantum confinement effect and single electron charging effect manifest themselves in device characteristics even at room temperature. Device modeling challenges for nanoscale MOSFETs are also discussed.

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来源期刊

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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