基于0.18μm CMOS的1.6 ~ 3.2/4.8 GHz双模注入锁定倍频器

Lin Zhang, D. Karasiewicz, B. Cifctioglu, Hui Wu
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引用次数: 19

摘要

为了更好地抑制谐波,本文提出了一种变模注入锁频倍频器。与传统方法相比,它更适合于在数字CMOS中使用低q片上电感器的全集成实现。在0.18 μ m标准数字CMOS上实现了1.6 GHz输入和3.2 GHz/4.8 GHz输出的双模倍频/三倍器原型。在5%的锁定范围内,倍频模式实现42 dB的基频抑制,功耗为2.2 mW,电源为1v;而三倍器模式在基频抑制40 dB,次谐波抑制32 dB,在1 V电源下功耗为3.7 mw。在倍频和三倍频模式下均实现了良好的相位噪声性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1.6-to-3.2/4.8 GHz dual-modulus injection-locked frequency multiplier in 0.18μm digital CMOS
This paper proposes a variable-modulus injection-locked frequency multiplier for better harmonic suppression. It is more suitable for fully-integrated implementation using low-Q on-chip inductors in digital CMOS than conventional approaches. A prototype dual-modulus frequency doubler/tripler with 1.6 GHz input and 3.2 GHz/4.8 GHz output is implemented in a 0.18 mum standard digital CMOS. At 5% locking range, the doubler mode achieves fundamental suppression of 42 dB with 2.2 mW power consumption from 1 V supply; while the tripler mode achieves 40 dB suppression at the fundamental and 32 dB at the second harmonic, with 3.7 mWpower consumption from 1 V supply. Good phase noise performance is achieved for both doubler and tripler modes.
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