量子阱红外光电探测器中的暗电流噪声和噪声增益

2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2014-10-30 DOI:10.1109/SBMICRO.2014.6940112

A. D. B. Maia, B. P. Figueroa, A. T. Bezerra, R. Kawabata, M. Pires, P. Souza

{"title":"量子阱红外光电探测器中的暗电流噪声和噪声增益","authors":"A. D. B. Maia, B. P. Figueroa, A. T. Bezerra, R. Kawabata, M. Pires, P. Souza","doi":"10.1109/SBMICRO.2014.6940112","DOIUrl":null,"url":null,"abstract":"Dark current noise in InGaAs/InAlAs quantum well infrared photodetectors has been investigated as a function of temperature and bias voltage. From the current noise dependence on these parameters the noise gain has been determined.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dark current noise and noise gain in quantum-well infrared photodetectors\",\"authors\":\"A. D. B. Maia, B. P. Figueroa, A. T. Bezerra, R. Kawabata, M. Pires, P. Souza\",\"doi\":\"10.1109/SBMICRO.2014.6940112\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dark current noise in InGaAs/InAlAs quantum well infrared photodetectors has been investigated as a function of temperature and bias voltage. From the current noise dependence on these parameters the noise gain has been determined.\",\"PeriodicalId\":244987,\"journal\":{\"name\":\"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2014.6940112\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2014.6940112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了InGaAs/InAlAs量子阱红外探测器中暗电流噪声随温度和偏置电压的变化规律。根据当前噪声对这些参数的依赖性，确定了噪声增益。

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Dark current noise and noise gain in quantum-well infrared photodetectors

Dark current noise in InGaAs/InAlAs quantum well infrared photodetectors has been investigated as a function of temperature and bias voltage. From the current noise dependence on these parameters the noise gain has been determined.

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来源期刊

2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)

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