InAs(P,Sb)/InAsSb led在室温下在3-4 /spl mu/m范围内发光

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773643

A. Stein, A. Behres, K. Heime, A. Wilk, P. Christol, A. Joullie, M. Brozicek, E. Hulicius, T. Šimeček, S. Rushworth, L. Smith, M. Ravetz

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引用次数: 0

摘要

我们报道了movpe生长的InAs(P,Sb)/InAsSb多量子阱(MQW) led在中红外光谱范围(3-4 /spl mu/m)下的发射特性。InAsP-InAsSb MQW结构在室温下表现出4.2 /spl mu/m的强电致发光，允许检测CO/sub 2/。InAsPSb-InAsSb MQW结构在270 K时表现出强烈的窄自发辐射(FWHM=75 nm)，约为3.3 /spl mu/m。对于InAs(P)/InAsSb和InAsPSb-InAsSb MQW结构的光致发光(PL)能量差异的解释，假设InAsPSb/InAsSb体系为i型波段对准，而InAs/InAsSb和InAsP/InAsSb量子阱为ii型波段对准，这可以通过计算得到证实。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InAs(P,Sb)/InAsSb LEDs emitting in the 3-4 /spl mu/m range at room temperature

We report the emission characteristics of MOVPE-grown InAs(P,Sb)/InAsSb multiquantum-well (MQW) LEDs operating in the mid-infrared spectral range (3-4 /spl mu/m). InAsP-InAsSb MQW structures exhibit at room temperature strong electroluminescence at 4.2 /spl mu/m, allowing the detection of CO/sub 2/. InAsPSb-InAsSb MQW structures show intense narrow (FWHM=75 nm) spontaneous emission around 3.3 /spl mu/m up to 270 K. The difference in photoluminescence (PL) energies for InAs(P)/InAsSb and InAsPSb-InAsSb MQW structures is explained supposing that the InAsPSb/InAsSb system has type-I band alignment whereas the InAs/InAsSb and InAsP/InAsSb quantum-wells are type-II, which can be confirmed by our calculations.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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