非电离辐射对近地轨道130nm CMOS SRAM的影响

NAECON 2014 - IEEE National Aerospace and Electronics Conference Pub Date : 2014-06-24 DOI:10.1109/NAECON.2014.7045835

Christopher I. Allen, J. Petrosky, P. L. Orlando

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引用次数: 2

摘要

本研究预测了近地轨道自然辐射环境对采用130 nm BiCMOS技术的CMOS部分设计的6T SRAM单元的影响。结果表明，该技术对单事件扰动(SEU)非常敏感:在200 km高度无屏蔽的情况下，预测的SEU速率为6.7×10-3 bit-1 -1;在2000公里高度，速率增加到1.9×101 bit- 1year -1。尽管如此，这些结果与先前发表的关于类似BiCMOS技术的双极部分的SEU数据[1]，[2]相比是有利的。

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Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10^-3 bit^-1yr^-1; at 2000 km altitude, the rate increases to 1.9×10¹ bit^-1yr^-1. Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.

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NAECON 2014 - IEEE National Aerospace and Electronics Conference

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