在低温下直接提取封装hemt的微波表征和建模

Proceedings of the 21st IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.04CH37510) Pub Date : 2004-05-18 DOI:10.1109/IMTC.2004.1351529

N. Donato, A. Caddemi, G. Crupi, E. Calandra

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引用次数: 6

摘要

在本工作中，我们采用直接提取的方法，通过测量低至低温的散射(S-)参数来确定微波GaAs场效应管的小信号等效电路。在封装的AlGaAs/InGaAs hemt上测试了直接萃取方法，在不同的偏置和温度条件下，模拟的s参数与测量的s参数吻合良好。我们在实验室中采用了适当设计的低温装置，可以在30k以下进行DC和RF表征。

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Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures

In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.

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Proceedings of the 21st IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.04CH37510)

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