GaN功率HEMT的大电流工作

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488013

H. Ueda, M. Sugimoto, T. Uesugi, O. Fujishima, T. Kachi

{"title":"GaN功率HEMT的大电流工作","authors":"H. Ueda, M. Sugimoto, T. Uesugi, O. Fujishima, T. Kachi","doi":"10.1109/ISPSD.2005.1488013","DOIUrl":null,"url":null,"abstract":"We report high current operation of GaN power HEMTs fabricated on a sapphire substrate by metalorganic chemical vapor deposition (MOCVD). In order to decrease an electrical resistance of the wiring to take out a high current, the thickness of Al plating was 3 Pm. In addition, in order to decrease a thermal resistance, the substrate was ground to 150 Pm. The drain current was over 30 A and the specific on-resistance was 14.5 m: -cm 2 under pulse measurement with the gate width of 157 mm. A high temperature operation over 300 °C was also verified.","PeriodicalId":154808,"journal":{"name":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"High current operation of GaN power HEMT\",\"authors\":\"H. Ueda, M. Sugimoto, T. Uesugi, O. Fujishima, T. Kachi\",\"doi\":\"10.1109/ISPSD.2005.1488013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report high current operation of GaN power HEMTs fabricated on a sapphire substrate by metalorganic chemical vapor deposition (MOCVD). In order to decrease an electrical resistance of the wiring to take out a high current, the thickness of Al plating was 3 Pm. In addition, in order to decrease a thermal resistance, the substrate was ground to 150 Pm. The drain current was over 30 A and the specific on-resistance was 14.5 m: -cm 2 under pulse measurement with the gate width of 157 mm. A high temperature operation over 300 °C was also verified.\",\"PeriodicalId\":154808,\"journal\":{\"name\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2005.1488013\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2005.1488013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

本文报道了采用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上制备GaN功率hemt的大电流工作。为了减小导线的电阻以取出大电流，镀铝厚度为3pm。此外，为了降低热阻，基片被接地至150pm。在栅极宽度为157 mm的脉冲测量下，漏极电流大于30 A，比导通电阻为14.5 m: -cm 2。还验证了300°C以上的高温操作。

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High current operation of GaN power HEMT

We report high current operation of GaN power HEMTs fabricated on a sapphire substrate by metalorganic chemical vapor deposition (MOCVD). In order to decrease an electrical resistance of the wiring to take out a high current, the thickness of Al plating was 3 Pm. In addition, in order to decrease a thermal resistance, the substrate was ground to 150 Pm. The drain current was over 30 A and the specific on-resistance was 14.5 m: -cm 2 under pulse measurement with the gate width of 157 mm. A high temperature operation over 300 °C was also verified.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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