采用180nm CMOS简化噪声滤波的2.4 ghz频段低压LC-VCO集成电路

Xinyi Wang, Xin Yang, Xiao Xu, T. Yoshimasu
{"title":"采用180nm CMOS简化噪声滤波的2.4 ghz频段低压LC-VCO集成电路","authors":"Xinyi Wang, Xin Yang, Xiao Xu, T. Yoshimasu","doi":"10.1109/IEEE-IWS.2016.7585430","DOIUrl":null,"url":null,"abstract":"This paper presents a low-voltage and low phase noise LC-VCO IC with simplified noise filtering in 180-nm CMOS technology. The novel VCO IC includes a cross-coupled pMOSFET pair, an LC resonator, buffer amplifiers and a tail inductor for noise filtering. The novel and conventional LC-VCO ICs are designed, fabricated and fully tested on wafer. At a power supply voltage of only 0.5 V, the novel VCO IC has exhibited a phase noise of -119.4 dBc/Hz at 1 MHz offset from the 2.25 GHz carrier frequency, which is 2.6 dB better than the conventional one.","PeriodicalId":185971,"journal":{"name":"2016 IEEE MTT-S International Wireless Symposium (IWS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"2.4-GHz-band low-voltage LC-VCO IC with simplified noise filtering in 180-nm CMOS\",\"authors\":\"Xinyi Wang, Xin Yang, Xiao Xu, T. Yoshimasu\",\"doi\":\"10.1109/IEEE-IWS.2016.7585430\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low-voltage and low phase noise LC-VCO IC with simplified noise filtering in 180-nm CMOS technology. The novel VCO IC includes a cross-coupled pMOSFET pair, an LC resonator, buffer amplifiers and a tail inductor for noise filtering. The novel and conventional LC-VCO ICs are designed, fabricated and fully tested on wafer. At a power supply voltage of only 0.5 V, the novel VCO IC has exhibited a phase noise of -119.4 dBc/Hz at 1 MHz offset from the 2.25 GHz carrier frequency, which is 2.6 dB better than the conventional one.\",\"PeriodicalId\":185971,\"journal\":{\"name\":\"2016 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2016.7585430\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2016.7585430","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

摘要

提出了一种采用180nm CMOS技术,采用简化噪声滤波的低压低相位噪声LC-VCO集成电路。新型VCO集成电路包括交叉耦合pMOSFET对、LC谐振器、缓冲放大器和用于噪声滤波的尾电感器。新型和传统的LC-VCO集成电路的设计,制造和充分测试在晶圆上。在电源电压仅为0.5 V的情况下,新型VCO集成电路在2.25 GHz载波频率偏移1 MHz时的相位噪声为-119.4 dBc/Hz,比传统的VCO集成电路高2.6 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
2.4-GHz-band low-voltage LC-VCO IC with simplified noise filtering in 180-nm CMOS
This paper presents a low-voltage and low phase noise LC-VCO IC with simplified noise filtering in 180-nm CMOS technology. The novel VCO IC includes a cross-coupled pMOSFET pair, an LC resonator, buffer amplifiers and a tail inductor for noise filtering. The novel and conventional LC-VCO ICs are designed, fabricated and fully tested on wafer. At a power supply voltage of only 0.5 V, the novel VCO IC has exhibited a phase noise of -119.4 dBc/Hz at 1 MHz offset from the 2.25 GHz carrier frequency, which is 2.6 dB better than the conventional one.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信