光刻和设计集成——技术架构发展的新范式

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI:10.1109/CICC.2012.6330685

J. Kye, Yuansheng Ma, Lei Yuan, Yunfei Deng, H. Levinson

{"title":"光刻和设计集成——技术架构发展的新范式","authors":"J. Kye, Yuansheng Ma, Lei Yuan, Yunfei Deng, H. Levinson","doi":"10.1109/CICC.2012.6330685","DOIUrl":null,"url":null,"abstract":"This paper proposes a new paradigm for coordination of lithography and design at advanced technology nodes. Growing complexity of technology without any lithography pitch reduction (knowing that we don't have any imminent lens NA or wavelength improvement) we need to challenge node to node scaling more than any time before. To achieve an appropriate scale factor for 20nm and beyond it is necessary to introduce double patterning. We are going to explain how we change our landscape.","PeriodicalId":130434,"journal":{"name":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Lithography and design integration — New paradigm for the technology architecture development\",\"authors\":\"J. Kye, Yuansheng Ma, Lei Yuan, Yunfei Deng, H. Levinson\",\"doi\":\"10.1109/CICC.2012.6330685\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a new paradigm for coordination of lithography and design at advanced technology nodes. Growing complexity of technology without any lithography pitch reduction (knowing that we don't have any imminent lens NA or wavelength improvement) we need to challenge node to node scaling more than any time before. To achieve an appropriate scale factor for 20nm and beyond it is necessary to introduce double patterning. We are going to explain how we change our landscape.\",\"PeriodicalId\":130434,\"journal\":{\"name\":\"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2012.6330685\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2012 Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2012.6330685","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

本文提出了一种在先进技术节点上实现光刻与设计协调的新范式。在没有任何光刻间距减少的情况下，技术的复杂性不断增加(知道我们没有任何迫在眉睫的透镜NA或波长改进)，我们需要比以往任何时候都更多地挑战节点到节点的缩放。为了实现20nm及以上的适当比例因子，有必要引入双模式。我们将解释我们如何改变我们的景观。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Lithography and design integration — New paradigm for the technology architecture development

This paper proposes a new paradigm for coordination of lithography and design at advanced technology nodes. Growing complexity of technology without any lithography pitch reduction (knowing that we don't have any imminent lens NA or wavelength improvement) we need to challenge node to node scaling more than any time before. To achieve an appropriate scale factor for 20nm and beyond it is necessary to introduce double patterning. We are going to explain how we change our landscape.

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Proceedings of the IEEE 2012 Custom Integrated Circuits Conference

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