C. Yang, Daniel C. Edelstein, Kaushik Chanda, Ping-Chuan Wang, Chenming Hu, E. Liniger, Stephan A. Cohen, James R. Lloyd, Baozhen Li, F. Mcfeely, R. Wisnieff, T. Ishizaka, F. M. Cerio, K. Suzuki, Jonathan Rullan, A. Selsley, M. Jomen
{"title":"用于Cu/Low-k开发的CVD Ru帽的集成和可靠性","authors":"C. Yang, Daniel C. Edelstein, Kaushik Chanda, Ping-Chuan Wang, Chenming Hu, E. Liniger, Stephan A. Cohen, James R. Lloyd, Baozhen Li, F. Mcfeely, R. Wisnieff, T. Ishizaka, F. M. Cerio, K. Suzuki, Jonathan Rullan, A. Selsley, M. Jomen","doi":"10.1109/IITC.2009.5090402","DOIUrl":null,"url":null,"abstract":"Selective CVD Ru cap deposition process has been developed for BEOL Cu/Low-k integration. Selectivity of CVD Ru deposition between Cu and dielectrics is investigated. Electrical performance, electromigration (EM) lifetime, voltage ramp (I–V), and time -dependent-dielectric-breakdown (TDDB) are also characterized for Cu interconnects capped with CVD Ru. This selective CVD Ru cap process is a good candidate for 22nm and beyond technology nodes.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Integration and reliability of CVD Ru cap for Cu/Low-k development\",\"authors\":\"C. Yang, Daniel C. Edelstein, Kaushik Chanda, Ping-Chuan Wang, Chenming Hu, E. Liniger, Stephan A. Cohen, James R. Lloyd, Baozhen Li, F. Mcfeely, R. Wisnieff, T. Ishizaka, F. M. Cerio, K. Suzuki, Jonathan Rullan, A. Selsley, M. Jomen\",\"doi\":\"10.1109/IITC.2009.5090402\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Selective CVD Ru cap deposition process has been developed for BEOL Cu/Low-k integration. Selectivity of CVD Ru deposition between Cu and dielectrics is investigated. Electrical performance, electromigration (EM) lifetime, voltage ramp (I–V), and time -dependent-dielectric-breakdown (TDDB) are also characterized for Cu interconnects capped with CVD Ru. This selective CVD Ru cap process is a good candidate for 22nm and beyond technology nodes.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090402\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090402","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integration and reliability of CVD Ru cap for Cu/Low-k development
Selective CVD Ru cap deposition process has been developed for BEOL Cu/Low-k integration. Selectivity of CVD Ru deposition between Cu and dielectrics is investigated. Electrical performance, electromigration (EM) lifetime, voltage ramp (I–V), and time -dependent-dielectric-breakdown (TDDB) are also characterized for Cu interconnects capped with CVD Ru. This selective CVD Ru cap process is a good candidate for 22nm and beyond technology nodes.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
